All Transistors. CHDTD123YKGP Datasheet

 

CHDTD123YKGP Datasheet and Replacement


   Type Designator: CHDTD123YKGP
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT-23
 

 CHDTD123YKGP Substitution

   - BJT ⓘ Cross-Reference Search

   

CHDTD123YKGP Datasheet (PDF)

 ..1. Size:138K  chenmko
 chdtd123ykgp.pdf pdf_icon

CHDTD123YKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123YKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.1. Size:98K  chenmko
 chdtd123ekgp.pdf pdf_icon

CHDTD123YKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.2. Size:103K  chenmko
 chdtd123tkgp.pdf pdf_icon

CHDTD123YKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.1. Size:62K  chenmko
 chdtd122jkgp.pdf pdf_icon

CHDTD123YKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD122JKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

SHOW MORE

Datasheet: CHDTD113EKGP , CHDTD113ZKGP , CHDTD113ZUGP , CHDTD114EKGP , CHDTD114GKGP , CHDTD122JKGP , CHDTD123EKGP , CHDTD123TKGP , 2N2222A , CHDTD133HKGP , CHDTD143TKGP , CHEMB10GP , CHEMB11GP , CHEMB2GP , CHEMB3GP , CHEMB4GP , CHEMB6GP .

History: 2SC3808 | 2SC4134T-E | BDX54AFI

Keywords - CHDTD123YKGP transistor datasheet

 CHDTD123YKGP cross reference
 CHDTD123YKGP equivalent finder
 CHDTD123YKGP lookup
 CHDTD123YKGP substitution
 CHDTD123YKGP replacement

 

 
Back to Top

 


 
.