All Transistors. CHDTD123YKGP Datasheet

 

CHDTD123YKGP Datasheet, Equivalent, Cross Reference Search


   Type Designator: CHDTD123YKGP
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT-23

 CHDTD123YKGP Transistor Equivalent Substitute - Cross-Reference Search

   

CHDTD123YKGP Datasheet (PDF)

 ..1. Size:138K  chenmko
chdtd123ykgp.pdf

CHDTD123YKGP
CHDTD123YKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123YKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.1. Size:98K  chenmko
chdtd123ekgp.pdf

CHDTD123YKGP
CHDTD123YKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.2. Size:103K  chenmko
chdtd123tkgp.pdf

CHDTD123YKGP
CHDTD123YKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.1. Size:62K  chenmko
chdtd122jkgp.pdf

CHDTD123YKGP
CHDTD123YKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD122JKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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