2S306 Datasheet. Specs and Replacement
Type Designator: 2S306 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 165 °C
Electrical Characteristics
Transition Frequency (ft): 0.75 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
📄📄 Copy
2S306 Substitution
- BJT ⓘ Cross-Reference Search
2S306 datasheet
2S306A Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar NPN Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 6V 5.08 (0.200) IC = 0.1A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b... See More ⇒
Detailed specifications: 2S303, 2S3030, 2S303A, 2S304, 2S3040, 2S304A, 2S305, 2S305A, BD786, 2S307, 2S307A, 2S31, 2S32, 2S321, 2S3210, 2S322, 2S3220
Keywords - 2S306 pdf specs
2S306 cross reference
2S306 equivalent finder
2S306 pdf lookup
2S306 substitution
2S306 replacement
BJT Parameters and How They Relate
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
2sa1103 | 2sb435 | 2sc1096 | 2sc2058 | a1693 datasheet | bdw94c equivalent | c2389 | c495 transistor

