2S306 Specs and Replacement
Type Designator: 2S306
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 165 °C
Electrical Characteristics
Transition Frequency (ft): 0.75 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
2S306 Substitution
- BJT ⓘ Cross-Reference Search
2S306 datasheet
2S306A Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar NPN Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 6V 5.08 (0.200) IC = 0.1A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b... See More ⇒
Detailed specifications: 2S303 , 2S3030 , 2S303A , 2S304 , 2S3040 , 2S304A , 2S305 , 2S305A , BC549 , 2S307 , 2S307A , 2S31 , 2S32 , 2S321 , 2S3210 , 2S322 , 2S3220 .
History: 2SC239 | CSC2786KF | 2SAR533P | 2SB1709
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