2S3210 Datasheet. Specs and Replacement
Type Designator: 2S3210 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO1
📄📄 Copy
2S3210 Substitution
- BJT ⓘ Cross-Reference Search
2S3210 datasheet
NO PDF data!
Detailed specifications: 2S305, 2S305A, 2S306, 2S307, 2S307A, 2S31, 2S32, 2S321, A1013, 2S322, 2S3220, 2S3221, 2S322A, 2S323, 2S3230, 2S324, 2S3240
Keywords - 2S3210 pdf specs
2S3210 cross reference
2S3210 equivalent finder
2S3210 pdf lookup
2S3210 substitution
2S3210 replacement
BJT Parameters and How They Relate
History: 2S306
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
c2389 | c495 transistor | c5242 reemplazo | d667 transistor datasheet | hy1d datasheet | mp20a transistor | mrf450 | oc70 transistor
