2SB647A-B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB647A-B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92MOD
2SB647A-B Transistor Equivalent Substitute - Cross-Reference Search
2SB647A-B Datasheet (PDF)
2sb647a-b.pdf
2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80
2sb647a-c.pdf
2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80
2sb647 2sb647a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors J C T TO 92M TO 92MOD 2SB647/2SB647A TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES 2. COLLECTOR Low Frequency Power Amplifier 3. EMITTER Complementary Pair with 2SD667/A 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Va
2sb647 2sb647a.pdf
2SB647(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features 2SD667(A)Complementary pair with 2SD667(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
