DMG26401 Datasheet. Specs and Replacement
Type Designator: DMG26401
SMD Transistor Code: E6
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: MINI6-G4-B
DMG26401 Substitution
- BJT ⓘ Cross-Reference Search
DMG26401 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DMG26405 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, r... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DMG26406 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, r... See More ⇒
Detailed specifications: DMC96403, DMC96404, DMC96405, DMC96406, DMC96407, DMC9640N, DMG26301, DMG26302, BD333, DMG26402, DMG26404, DMG26405, DMG26406, DMG26412, DMG264H0, DMG56301, DMG56302
Keywords - DMG26401 pdf specs
DMG26401 cross reference
DMG26401 equivalent finder
DMG26401 pdf lookup
DMG26401 substitution
DMG26401 replacement
