DMG26406 Datasheet. Specs and Replacement

Type Designator: DMG26406

SMD Transistor Code: L9

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: MINI6-G4-B

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DMG26406 datasheet

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DMG26406

This product complies with the RoHS Directive (EU 2002/95/EC). DMG26406 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, r... See More ⇒

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DMG26406

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DMG26406

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DMG26406

This product complies with the RoHS Directive (EU 2002/95/EC). DMG26405 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, r... See More ⇒

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Detailed specifications: DMC96407, DMC9640N, DMG26301, DMG26302, DMG26401, DMG26402, DMG26404, DMG26405, 2SC5200, DMG26412, DMG264H0, DMG56301, DMG56302, DMG56306, DMG563H1, DMG563H4, DMG563H5

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