All Transistors. DRA2114E Datasheet

 

DRA2114E Datasheet and Replacement


   Type Designator: DRA2114E
   SMD Transistor Code: LB
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: MINI3-G3-B
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DRA2114E Datasheet (PDF)

 ..1. Size:353K  panasonic
 dra2114e.pdf pdf_icon

DRA2114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

 7.1. Size:353K  panasonic
 dra2114y.pdf pdf_icon

DRA2114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Pin Name Eco-friendly Halogen-free package 1: Base

 7.2. Size:352K  panasonic
 dra2114t.pdf pdf_icon

DRA2114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c

 8.1. Size:354K  panasonic
 dra2115t.pdf pdf_icon

DRA2114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2115T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c

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History: 2N5125 | BUD620SMD | BFS18 | 2SD1745 | NPS3906 | MPS5131 | OC306-3

Keywords - DRA2114E transistor datasheet

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