DRA2144V Datasheet. Specs and Replacement

Type Designator: DRA2144V

SMD Transistor Code: LJ

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: MINI3-G3-B

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DRA2144V datasheet

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DRA2144V

This product complies with the RoHS Directive (EU 2002/95/EC). DRA2144T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2144T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c... See More ⇒

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DRA2144V

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Detailed specifications: DRA2124X, DRA2143E, DRA2143T, DRA2143X, DRA2143Y, DRA2143Z, DRA2144E, DRA2144T, A1013, DRA2144W, DRA2152Z, DRA2514E, DRA2522J, DRA2523E, DRA2523Y, DRA2533Q, DRA2543E

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