DRA4113Z Datasheet. Specs and Replacement

Type Designator: DRA4113Z

SMD Transistor Code: L1

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: NS-B2-B-B

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DRA4113Z datasheet

 ..1. Size:224K  panasonic

 dra4113z.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4113Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4113Z DRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free... See More ⇒

 8.1. Size:348K  panasonic

 dra4114e.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114E DRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free... See More ⇒

 8.2. Size:220K  panasonic

 dra4114t.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114T DRA2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat... See More ⇒

 8.3. Size:223K  panasonic

 dra4114y.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114Y DRA2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free... See More ⇒

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Detailed specifications: DRA3A23J, DRA3A23Y, DRA3A24E, DRA3A43E, DRA3A43T, DRA3A43X, DRA3A43Z, DRA3A44E, C945, DRA4114E, DRA4114T, DRA4114Y, DRA4123J, DRA4123Y, DRA4124E, DRA4124T, DRA4143E

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