DRA4113Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DRA4113Z  📄📄 

Código: L1

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: NS-B2-B-B

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DRA4113Z datasheet

 ..1. Size:224K  panasonic
 dra4113z.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4113Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4113Z DRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

 8.1. Size:348K  panasonic
 dra4114e.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114E DRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

 8.2. Size:220K  panasonic
 dra4114t.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114T DRA2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 8.3. Size:223K  panasonic
 dra4114y.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114Y DRA2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

MOSTRAR MÁS

Otros transistores... DRA3A23J, DRA3A23Y, DRA3A24E, DRA3A43E, DRA3A43T, DRA3A43X, DRA3A43Z, DRA3A44E, C945, DRA4114E, DRA4114T, DRA4114Y, DRA4123J, DRA4123Y, DRA4124E, DRA4124T, DRA4143E