DRA4113Z Todos los transistores

 

DRA4113Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRA4113Z
   Código: L1
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: NS-B2-B-B
 

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DRA4113Z Datasheet (PDF)

 ..1. Size:224K  panasonic
 dra4113z.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4113ZDRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

 8.1. Size:348K  panasonic
 dra4114e.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114EDRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

 8.2. Size:220K  panasonic
 dra4114t.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114TDRA2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 8.3. Size:223K  panasonic
 dra4114y.pdf pdf_icon

DRA4113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114YDRA2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

MOSTRAR MÁS

Otros transistores... DRA3A23J , DRA3A23Y , DRA3A24E , DRA3A43E , DRA3A43T , DRA3A43X , DRA3A43Z , DRA3A44E , 2N5401 , DRA4114E , DRA4114T , DRA4114Y , DRA4123J , DRA4123Y , DRA4124E , DRA4124T , DRA4143E .

History: 2N5181 | ZTX1048A | MJ11015G | C8050D | CSA748Q | SRC1212EF | 2PD601ARW

 

 
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