All Transistors. DRA4123J Datasheet

 

DRA4123J Datasheet and Replacement


   Type Designator: DRA4123J
   SMD Transistor Code: L4
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: NS-B2-B-B
 

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DRA4123J Datasheet (PDF)

 ..1. Size:223K  panasonic
 dra4123j.pdf pdf_icon

DRA4123J

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4123JDRA2123J in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

 7.1. Size:223K  panasonic
 dra4123y.pdf pdf_icon

DRA4123J

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4123YDRA2123Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

 8.1. Size:221K  panasonic
 dra4124t.pdf pdf_icon

DRA4123J

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4124TDRA2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 8.2. Size:348K  panasonic
 dra4124e.pdf pdf_icon

DRA4123J

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4124EDRA2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: CS1506G | BCM847BS | 2SA580 | KSE45H-1

Keywords - DRA4123J transistor datasheet

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