DRA4523Y Datasheet. Specs and Replacement

Type Designator: DRA4523Y

SMD Transistor Code: SK

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: NS-B2-B

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DRA4523Y datasheet

 ..1. Size:351K  panasonic

 dra4523y.pdf pdf_icon

DRA4523Y

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4523Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4523Y DRA2523Y in NS through hole type package Features Package Contributes to miniaturization of sets, mount area reduction Code Eco-friendly Halogen-free package NS-B2-B Package dimension clicks here. Click! Pac... See More ⇒

 7.1. Size:139K  panasonic

 dra4523e.pdf pdf_icon

DRA4523Y

DRA4523E Total pages page Tentative DRA4523E Silicon PNP epitaxial planar type For digital circuits Marking Symbol SH Package Code NS-B1-B Internal Connection Absolute Maximum Ratings Ta = 25 C R1 C Parameter Symbol Rating Unit B Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Collector current IC -500 mA R2 Total power... See More ⇒

 9.1. Size:452K  panasonic

 dra4543e.pdf pdf_icon

DRA4523Y

DRA4543E Total pages page Tentative DRA4543E Silicon PNP epitaxial planar type For digital circuits Marking Symbol UY Package Code NS-B1-B Internal Connection Absolute Maximum Ratings Ta = 25 C R1 C Parameter Symbol Rating Unit B Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Collector current IC -500 mA R2 Total power... See More ⇒

 9.2. Size:139K  panasonic

 dra4514e.pdf pdf_icon

DRA4523Y

DRA4514E Total pages page Tentative DRA4514E Silicon PNP epitaxial planar type For digital circuits Marking Symbol UZ Package Code NS-B1-B Internal Connection Absolute Maximum Ratings Ta = 25 C R1 C Parameter Symbol Rating Unit B Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Collector current IC -500 mA R2 Total power... See More ⇒

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Detailed specifications: DRA4143Z, DRA4144E, DRA4144T, DRA4144V, DRA4144W, DRA4152Z, DRA4514E, DRA4523E, 2N3906, DRA4543E, DRA5113Z, DRA5114E, DRA5114T, DRA5114Y, DRA5115E, DRA5115G, DRA5115T

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