2SA1001 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1001
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 130 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
2SA1001 Transistor Equivalent Substitute - Cross-Reference Search
2SA1001 Datasheet (PDF)
2sa1001.pdf
isc Silicon PNP Power Transistor 2SA1001DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -130V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sa1008.pdf
DATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1008 is a mold power transistor developed for high-speed ORDERING INFORMATIONswitching, and is ideal for use as a driver in devices such as switchingPart No. Packageregulators, DC/DC converters, and high-frequency power amplifiers.2SA1008 TO-220ABFEATURES(TO-220AB)
2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf
This Material Copyrighted By Its Respective Manufacturer
2sa1008.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1008 DESCRIPTION With TO-220 package Complement to type 2SC2331 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplifie
2sa1006 2sa1006a 2sa1006b.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3
2sa1007.pdf
isc Silicon PNP Power Transistor 2SA1007DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SC2337Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sa1003.pdf
isc Silicon PNP Power Transistor 2SA1003DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sa1008.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1008DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@ I = -1ACE(sat) CFast Switching SpeedComplement to Type 2SC2331Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver in devices such as switchingregulators, DC/DC converte
2sa1006a.pdf
isc Silicon PNP Power Transistor 2SA1006ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC2336AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLUTE
2sa1006b.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1006BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -250Vdc (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC2336BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency p
2sa1009.pdf
isc Silicon PNP Power Transistor 2SA1009DESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= -1V(Max.)@ IC= -0.3AFast Switching SpeedWide Reverse Bias Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, DC/DC converters andHigh frequency power
2sa1009a.pdf
isc Silicon PNP Power Transistor 2SA1009ADESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= -1V(Max.)@ IC= -0.3AFast Switching SpeedWide Reverse Bias Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, DC/DC converters andHigh frequency power amplifier application.
2sa1006 2sa1006a 2sa1006b.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22
2sa1002.pdf
isc Silicon PNP Power Transistor 2SA1002DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
