2SA1005 Datasheet and Replacement

   Type Designator: 2SA1005
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 1.1 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO92

2SA1005 Substitution

- BJT Cross-Reference Search

2SA1005 Datasheet (PDF)

8.1. Size:109K nec
2sa1008.pdf pdf_icon

DATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1008 is a mold power transistor developed for high-speed ORDERING INFORMATIONswitching, and is ideal for use as a driver in devices such as switchingPart No. Packageregulators, DC/DC converters, and high-frequency power amplifiers.2SA1008 TO-220ABFEATURES(TO-220AB)

8.2. Size:194K nec
2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer

8.3. Size:179K nec
2sa1009 2sa1009 2sa1009a.pdf pdf_icon

8.4. Size:75K no
2sa100.pdf pdf_icon

8.5. Size:216K jmnic
2sa1008.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1008 DESCRIPTION With TO-220 package Complement to type 2SC2331 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplifie

8.6. Size:199K jmnic
2sa1006 2sa1006a 2sa1006b.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3

8.7. Size:195K inchange semiconductor
2sa1007.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1007DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SC2337Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

8.8. Size:612K inchange semiconductor
2sa1006.pdf pdf_icon

8.9. Size:194K inchange semiconductor
2sa1003.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1003DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

8.10. Size:208K inchange semiconductor
2sa1008.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1008DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@ I = -1ACE(sat) CFast Switching SpeedComplement to Type 2SC2331Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver in devices such as switchingregulators, DC/DC converte

8.11. Size:207K inchange semiconductor
2sa1006a.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1006ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC2336AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLUTE

8.12. Size:327K inchange semiconductor
2sa1006b.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1006BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -250Vdc (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC2336BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency p

8.13. Size:217K inchange semiconductor
2sa1009.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1009DESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= -1V(Max.)@ IC= -0.3AFast Switching SpeedWide Reverse Bias Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, DC/DC converters andHigh frequency power

8.14. Size:216K inchange semiconductor
2sa1009a.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1009ADESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= -1V(Max.)@ IC= -0.3AFast Switching SpeedWide Reverse Bias Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, DC/DC converters andHigh frequency power amplifier application.

8.15. Size:124K inchange semiconductor
2sa1006 2sa1006a 2sa1006b.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22

8.16. Size:195K inchange semiconductor
2sa1001.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1001DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -130V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

8.17. Size:193K inchange semiconductor
2sa1002.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1002DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

Datasheet: 2S97 , 2S98 , 2S99 , 2SA100 , 2SA1001 , 2SA1002 , 2SA1003 , 2SA1004 , 2N4401 , 2SA1006 , 2SA1006A , 2SA1006B , 2SA1007 , 2SA1007A , 2SA1008 , 2SA1009 , 2SA1009A .