All Transistors. DTA114ES3 Datasheet

 

DTA114ES3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTA114ES3
   SMD Transistor Code: 6A
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-323

 DTA114ES3 Transistor Equivalent Substitute - Cross-Reference Search

   

DTA114ES3 Datasheet (PDF)

 ..1. Size:161K  cystek
dta114es3.pdf

DTA114ES3 DTA114ES3

Spec. No. : C252S3 Issued Date : 2003.06.12 CYStech Electronics Corp. Revised Date : Page No. : 1/4 PNP Digital Transistors (Built-in Resistors) DTA114ES3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet

 6.1. Size:58K  motorola
pdta114es 2.pdf

DTA114ES3 DTA114ES3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o

 6.2. Size:58K  philips
pdta114es 2.pdf

DTA114ES3 DTA114ES3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o

 6.3. Size:60K  rohm
dta114eka dta114esa dta114eua.pdf

DTA114ES3 DTA114ES3

DTA114EM / DTA114EE / DTA114EUA Transistors DTA114EKA / DTA114ESA -100mA / -50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA / DTA114ESA Applications Inverter, Interface, Driver Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit)

 6.4. Size:342K  htsemi
dta114eca dta114ee dta114esa dta114eua.pdf

DTA114ES3 DTA114ES3

DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA Digital transistors (PNP)FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuitwithout connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolationto allow positive biasing of the input.They also have the advantage ofalmost co

 6.5. Size:1199K  kexin
dta114esa.pdf

DTA114ES3 DTA114ES3

DIP Type TransistorsDigital TransistorsDTA114ESA (KDTA114ESA)TO-92SUnit:mm4.00.12.480.245 TYP Features Built-in bias resistors enable the configuration of an inverter circuit0.48 (max)0.35 (min ) without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete21 30.55 (max) isol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC553 | BDX67L | 2SC5556 | BDY13-16 | HEPS9151 | 2SC520M | 2SC5241

 

 
Back to Top