2SA1012O Datasheet and Replacement
Type Designator: 2SA1012O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 60
MHz
Collector Capacitance (Cc): 170
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package:
TO220
2SA1012O Transistor Equivalent Substitute - Cross-Reference Search
2SA1012O Datasheet (PDF)
7.2. Size:343K utc
2sa1012.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low Collector Saturation Voltage V =-0.4V(max.) At I =-3A CE(SAT) C *High Speed Switching Time t =1.0 s (Typ.) S *Complementary To 2SC2562 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1012L-x-TA3-... See More ⇒
7.4. Size:742K jiangsu
2sa1012b.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012B TRANSISTOR (PNP) FEATURES TO-252-2L -2A,-50V Middle Power Transistor Suitable for Middle Power Driver Low Collector-emitter saturation voltage APPLICATIONS 1. BASE Middle Power Driver 2. COLLECTOR LED Driver Power Supply 3. EMITTER MARKING A1012B= Dev... See More ⇒
7.5. Size:1282K jiangsu
2sa1012.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) FEATURES High Current Switching Applications. Low Collector Saturation Voltage High Speed Swithing Time 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base... See More ⇒
7.6. Size:119K jmnic
2sa1012.pdf 

Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features B C E With TO-220 package Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissip... See More ⇒
7.7. Size:318K lge
2sa1012.pdf 

2SA1012(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Coll... See More ⇒
7.8. Size:583K semtech
st2sa1012.pdf 

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collec... See More ⇒
7.9. Size:226K lzg
2sa1012 3ca1012.pdf 

2SA1012(3CA1012) PNP /SILICON PNP TRANSISTOR Purpose High current switching applications. , , 2SC2562(3DA2562) Features Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). /Absolute maximum ratings(Ta=25 ) ... See More ⇒
7.10. Size:196K inchange semiconductor
2sa1012-d.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -3A CE(sat) C High Switching Speed TO-252 Package -D = Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
7.11. Size:242K inchange semiconductor
2sa1012.pdf 

isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC2562 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Datasheet: 2SA1009
, 2SA1009A
, 2SA101
, 2SA1010
, 2SA1011
, 2SA1011D
, 2SA1011E
, 2SA1012
, TIP142
, 2SA1012Y
, 2SA1013
, 2SA1013O
, 2SA1013R
, 2SA1014
, 2SA1015
, 2SA1015L
, 2SA1015LG
.
History: 2N3187
| 2N3186
| 2N3189
| 2SA1016K
| 2N3180
Keywords - 2SA1012O transistor datasheet
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