All Transistors. DTC114YN3 Datasheet

 

DTC114YN3 Datasheet and Replacement


   Type Designator: DTC114YN3
   SMD Transistor Code: 8D
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SOT-23
 

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DTC114YN3 Datasheet (PDF)

 ..1. Size:146K  cystek
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DTC114YN3

Spec. No. : C355N3 Issued Date : 2002.06.01 CYStech Electronics Corp.Revised Date : 2002.11.04 Page No. : 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC114YN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-f

 7.1. Size:144K  motorola
dtc114yerev1.pdf pdf_icon

DTC114YN3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 7.2. Size:94K  motorola
dtc114ye 69 sot416.pdf pdf_icon

DTC114YN3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 7.3. Size:56K  motorola
pdtc114yt 3.pdf pdf_icon

DTC114YN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD2656 | CTP1330 | NSBC144EDXV6 | NSD204 | NKT163-25 | 2SC1161A | BTNH10A3

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