All Transistors. EMB10FHA Datasheet

 

EMB10FHA Datasheet, Equivalent, Cross Reference Search


   Type Designator: EMB10FHA
   SMD Transistor Code: B10
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-107C

 EMB10FHA Transistor Equivalent Substitute - Cross-Reference Search

   

EMB10FHA Datasheet (PDF)

 ..1. Size:1355K  rohm
 emb10fha umb10nfha imb10afra.pdf

EMB10FHA EMB10FHA

EMB10 / UMB10N / IMB10AEMB10FHA / UMB10NFHA / IMB10AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) (2) IC(MAX.)-100mA (3) (3) R12.2kWEMB10 UMB10N EMB10FHA UMB10NFHAR247kW (SC-107C) SOT-353 (

 ..2. Size:1355K  rohm
 emb10fha.pdf

EMB10FHA EMB10FHA

EMB10 / UMB10N / IMB10AEMB10FHA / UMB10NFHA / IMB10AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) (2) IC(MAX.)-100mA (3) (3) R12.2kWEMB10 UMB10N EMB10FHA UMB10NFHAR247kW (SC-107C) SOT-353 (

 9.1. Size:801K  nxp
 pemb10 pumb10.pdf

EMB10FHA EMB10FHA

PEMB10; PUMB10PNP/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 47 kRev. 3 3 January 2012 Product data sheet1. Product profile1.1 General descriptionPNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP NPN/NPN Package complement complement configurationNXP JEITAPEM

 9.2. Size:118K  rohm
 emb10 umb10n imb10a umb10n.pdf

EMB10FHA EMB10FHA

EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit : mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10package. (6) (5) (4)2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interference. Each l

 9.3. Size:543K  rohm
 emb10.pdf

EMB10FHA EMB10FHA

EMB10 / UMB10N / IMB10ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) (2) IC(MAX.)-100mA (3) (3) R12.2kWEMB10 UMB10N R2(SC-107C) 47kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) (3) 1) Built-In Biasing

 9.4. Size:119K  chenmko
 chemb10gp.pdf

EMB10FHA EMB10FHA

CHENMKO ENTERPRISE CO.,LTDCHEMB10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ECG93 | EMD72 | MM420 | PN706 | BD652F | MM1605 | 2SA121

 

 
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