EMB10FHA Datasheet. Specs and Replacement

Type Designator: EMB10FHA

SMD Transistor Code: B10

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC-107C

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EMB10FHA datasheet

 ..1. Size:1355K  rohm

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EMB10FHA

EMB10 / UMB10N / IMB10A EMB10FHA / UMB10NFHA / IMB10AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) (2) IC(MAX.) -100mA (3) (3) R1 2.2kW EMB10 UMB10N EMB10FHA UMB10NFHA R2 47kW (SC-107C) SOT-353 (... See More ⇒

 ..2. Size:1355K  rohm

emb10fha.pdf pdf_icon

EMB10FHA

EMB10 / UMB10N / IMB10A EMB10FHA / UMB10NFHA / IMB10AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) (2) IC(MAX.) -100mA (3) (3) R1 2.2kW EMB10 UMB10N EMB10FHA UMB10NFHA R2 47kW (SC-107C) SOT-353 (... See More ⇒

 9.1. Size:801K  nxp

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EMB10FHA

PEMB10; PUMB10 PNP/PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Rev. 3 3 January 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP NPN/NPN Package complement complement configuration NXP JEITA PEM... See More ⇒

 9.2. Size:118K  rohm

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EMB10FHA

EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10 package. (6) (5) (4) 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3) interference. Each l... See More ⇒

Detailed specifications: DTD143EN3, DTD143TK, DTD143TN3, DTDG14GP, EMA3, EMA4, EMA5, EMB10, TIP2955, EMB11, EMB11FHA, EMB2, EMC3DXV5T1G, EMC3DXV5T5G, EMC4DXV5, EMC4DXV5T1G, EMC5DXV5

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