EMF5XV6 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMF5XV6
SMD Transistor Code: UY
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.357
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-563
EMF5XV6 Transistor Equivalent Substitute - Cross-Reference Search
EMF5XV6 Datasheet (PDF)
emf5xv6t5-d emf5xv6 emf5xv6t5g.pdf
EMF5XV6T5Preferred DevicesPower Management,Dual TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comFeatures Simplifies Circuit Design(3) (2) (1) Reduces Board Space Reduces Component CountQ1 These are Pb-Free DevicesQ2MAXIMUM RATINGSR2 R1Rating Symbol Value Unit(4) (5) (6)Q1 (TA = 25C unless o
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
