All Transistors. EMG2DXV5T5G Datasheet

 

EMG2DXV5T5G Datasheet and Replacement


   Type Designator: EMG2DXV5T5G
   SMD Transistor Code: UP
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.23 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-553

 EMG2DXV5T5G Transistor Equivalent Substitute - Cross-Reference Search

   

EMG2DXV5T5G Datasheet (PDF)

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EMG2DXV5T5G

EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias net... See More ⇒

Datasheet: EMD9FHA , EMF18XV6 , EMF18XV6T5 , EMF18XV6T5G , EMF5XV6 , EMF5XV6T5G , EMG1 , EMG2 , TIP122 , EMG3 , EMG4 , EMG5 , EMG5DXV5T1 , EMG6 , EMG8 , EMG9 , EMH1 .

History: QSL11 | KRA106M | KRA722E | KRA726E | QM5HG-24 | QSX3 | QS6Z5

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