EMG2DXV5T5G Datasheet. Specs and Replacement

Type Designator: EMG2DXV5T5G  📄📄 

SMD Transistor Code: UP

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.23 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT-553

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EMG2DXV5T5G datasheet

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EMG2DXV5T5G

EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias net... See More ⇒

Detailed specifications: EMD9FHA, EMF18XV6, EMF18XV6T5, EMF18XV6T5G, EMF5XV6, EMF5XV6T5G, EMG1, EMG2, TIP122, EMG3, EMG4, EMG5, EMG5DXV5T1, EMG6, EMG8, EMG9, EMH1

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