EMG4 Datasheet and Replacement
Type Designator: EMG4
SMD Transistor Code: G4
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107BB
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EMG4 Datasheet (PDF)
emg4 umg4n fmg4a.pdf

EMG4 / UMG4N / FMG4A Transistors General purpose (dual digital transistors) EMG4 / UMG4N / FMG4A External dimensions (Unit : mm) Features1) Two DTC114T chips in a EMT or UMT or SMTEMG4package.(4) (3)(2)( ) (1)5 Equivalent circuits 1.21.6EMG4 / UMG4N FMG4A(3) (2) (1) (3) (4) (5)R1 R1 R1 R1ROHM : EMT5 Each lead has same dimensions(4) (5) (2) (1)R
emg4.pdf

EMG4 / UMG4N / FMG4ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCEO (1) 50V(4) (1) (4) IC(MAX.) (2) 100mA(3) (5) R110kWEMG4 UMG4N (SC-107BB) SOT-353 (SC-88A) SMT5(1) lFeatures(2) (5) 1) Built-In Biasing Resistors.(4) (3) 2) Two DTC114T chips in on
chemg4gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG4GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: CD97 | BF420A | 2N3183 | 2N2473 | 2SB1144S | MM4019 | BTB1424AT3
Keywords - EMG4 transistor datasheet
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History: CD97 | BF420A | 2N3183 | 2N2473 | 2SB1144S | MM4019 | BTB1424AT3



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