EMH4 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMH4
SMD Transistor Code: H4
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107C
EMH4 Transistor Equivalent Substitute - Cross-Reference Search
EMH4 Datasheet (PDF)
emh4 umh4n imh4a.pdf
EMH4 / UMH4N / IMH4A Transistors General purpose (dual digital transistors) EMH4 / UMH4N / IMH4A External dimensions (Unit : mm) Features1) Two DTC114T chips in a EMT or UMT or SMTEMH4package.( ) ( )4 3(5) (2)(6) ( )1 Equivalent circuits1.21pin mark1.6EMH4 / UMH4NIMH4A(3) (2) (1) (4) (5) (6)R1R1ROHM : EMT6 Each lead has same dimensionsR1R1
emh4.pdf
EMH4 / UMH4N / IMH4ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH4 UMH4N (SC-107C) SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) (3) 1) Built-In Biasing Resistors. (2)
emh4.pdf
EMH4 digital transistor (NPN+ NPN)SOT-563 FEATURES Two DTC114T chips in a package Transistor elements are independent, eliminating interference 1 Mounting cost and area can be cut in half. External circuit MARKING: H4 Absolute maximum ratings (Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO 50 VCollector-emitter voltage V(BR)CEO 50 VEmitte
pemh4 pumh4.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH4; PUMH4NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = openProduct data sheet 2004 Apr 14Supersedes data of 2003 Oct 02NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH4; PUMH4R1 = 10 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
emh4fha umh4nfha imh4afra.pdf
EMH4 / UMH4N / IMH4AEMH4FHA / UMH4NFHA / IMH4AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH4 UMH4N EMH4FHA UMH4NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)
emh4fha umh4nfha.pdf
EMH4 / UMH4N / IMH4AEMH4FHA / UMH4NFHA / IMH4AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH4 UMH4N EMH4FHA UMH4NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)
chemh4gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMH4GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RT5P431C
