EMH59 Datasheet and Replacement
Type Designator: EMH59
SMD Transistor Code: H59
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC-107C
EMH59 Substitution
EMH59 Datasheet (PDF)
emh59.pdf

EMH59DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R110kEMH59R2 (SC-107C) 47k lFeatures lInner circuitl l1) Two DTC014Y chips in a EMT6 package.2) Transister elements are independent, eliminating
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC1710 | 2N930A-51 | 2SA1555
Keywords - EMH59 transistor datasheet
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History: 2SC1710 | 2N930A-51 | 2SA1555



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