All Transistors. EMH59 Datasheet

 

EMH59 Datasheet and Replacement


   Type Designator: EMH59
   SMD Transistor Code: H59
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-107C
 

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EMH59 Datasheet (PDF)

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EMH59

EMH59DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R110kEMH59R2 (SC-107C) 47k lFeatures lInner circuitl l1) Two DTC014Y chips in a EMT6 package.2) Transister elements are independent, eliminating

Datasheet: EMH2FHA , EMH3 , EMH3FHA , EMH4 , EMH4FHA , EMH51 , EMH52 , EMH53 , S8550 , EMH6 , EMH60 , EMH61 , EMH6FHA , EMH75 , EMH9 , EMH9FHA , EML17 .

History: 2N1131-51

Keywords - EMH59 transistor datasheet

 EMH59 cross reference
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