EMH60 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMH60
SMD Transistor Code: H60
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC-107C
EMH60 Transistor Equivalent Substitute - Cross-Reference Search
EMH60 Datasheet (PDF)
emh60.pdf
EMH60DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R12.2kEMH60R2 (SC-107C) 47k lFeatures lInner circuitl l1) Two DTC023J chips in a EMT6 package.2) Transister elements are independent, eliminating
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DD13007Z7 | 2N2612 | KRC112S | 3DD13007MD-F
History: 3DD13007Z7 | 2N2612 | KRC112S | 3DD13007MD-F
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