EMH61 Datasheet. Specs and Replacement

Type Designator: EMH61

SMD Transistor Code: H61

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SC-107C

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EMH61 datasheet

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EMH61

EMH61 Datasheet Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter DTr1 and DTr2 EMT6 VCC 50V IC(MAX.) 100mA R1 10k EMH61 R2 (SC-107C) 10k lFeatures lInner circuit l l 1) Two DTC014E chips in a EMT6 package. 2) Transister elements are independent, eliminating ... See More ⇒

Detailed specifications: EMH4, EMH4FHA, EMH51, EMH52, EMH53, EMH59, EMH6, EMH60, TIP35C, EMH6FHA, EMH75, EMH9, EMH9FHA, EML17, EML20, FA4A3Q, FA4A4L

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