All Transistors. EMH9FHA Datasheet

 

EMH9FHA Datasheet, Equivalent, Cross Reference Search


   Type Designator: EMH9FHA
   SMD Transistor Code: H9
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SC-107C

 EMH9FHA Transistor Equivalent Substitute - Cross-Reference Search

   

EMH9FHA Datasheet (PDF)

 ..1. Size:1291K  rohm
 emh9fha umh9nfha.pdf

EMH9FHA EMH9FHA

EMH9FHA / UMH9NFHA / IMH9AFRAEMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9FHA UMH9NFHAEMH9 UMH9N R247kW (SC-107C) SOT-353 (SC-88) SMT6

 ..2. Size:1335K  rohm
 emh9fha umh9nfha imh9afra.pdf

EMH9FHA EMH9FHA

EMH9FHA / UMH9NFHA / IMH9AFRAEMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9FHA UMH9NFHAEMH9 UMH9N R247kW (SC-107C) SOT-353 (SC-88) SMT6

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC1089B

 

 
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