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FA4A4Z Specs and Replacement


   Type Designator: FA4A4Z
   SMD Transistor Code: AL1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 135
   Noise Figure, dB: -
   Package: SC-59

 FA4A4Z Transistor Equivalent Substitute - Cross-Reference Search

   

FA4A4Z detailed specifications

 ..1. Size:514K  renesas
 fa4a3q fa4a4l fa4a4m fa4a4p fa4a4z fa4f3m fa4f3p fa4f3r fa4f4m fa4f4n fa4f4z fa4l3m fa4l3n fa4l3z fa4l4k fa4l4l fa4l4m fa4l4z.pdf pdf_icon

FA4A4Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: EMH9 , EMH9FHA , EML17 , EML20 , FA4A3Q , FA4A4L , FA4A4M , FA4A4P , 9014 , FA4F3M , FA4F3P , FA4F3R , FA4F4M , FA4F4N , FA4F4Z , FA4L3M , FA4L3N .

History: 2SA544

Keywords - FA4A4Z transistor specs

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