FA4A4Z Datasheet, Equivalent, Cross Reference Search
Type Designator: FA4A4Z
SMD Transistor Code: AL1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SC-59
FA4A4Z Transistor Equivalent Substitute - Cross-Reference Search
FA4A4Z Datasheet (PDF)
..1. Size:514K renesas
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fa4a3q fa4a4l fa4a4m fa4a4p fa4a4z fa4f3m fa4f3p fa4f3r fa4f4m fa4f4n fa4f4z fa4l3m fa4l3n fa4l3z fa4l4k fa4l4l fa4l4m fa4l4z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KRA113M
