FA4F4Z Datasheet. Specs and Replacement
Type Designator: FA4F4Z
SMD Transistor Code: AM1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 135
Package: SC-59
FA4F4Z Substitution
- BJT ⓘ Cross-Reference Search
FA4F4Z datasheet
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: FA4A4M, FA4A4P, FA4A4Z, FA4F3M, FA4F3P, FA4F3R, FA4F4M, FA4F4N, S9013, FA4L3M, FA4L3N, FA4L3Z, FA4L4K, FA4L4L, FA4L4M, FA4L4Z, FB1A3M
Keywords - FA4F4Z pdf specs
FA4F4Z cross reference
FA4F4Z equivalent finder
FA4F4Z pdf lookup
FA4F4Z substitution
FA4F4Z replacement
