All Transistors. FP1L3N Datasheet

 

FP1L3N Datasheet and Replacement


   Type Designator: FP1L3N
   SMD Transistor Code: S34_S35
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT23-3
 

 FP1L3N Substitution

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FP1L3N Datasheet (PDF)

 ..1. Size:262K  renesas
 fp1a3m fp1a4a fp1a4m fp1f3p fp1j3p fp1l2q fp1l3n.pdf pdf_icon

FP1L3N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: FN4L4M , FN4L4Z , FP1A3M , FP1A4A , FP1A4M , FP1F3P , FP1J3P , FP1L2Q , C945 , GA4A3Q , GA4A4L , GA4A4M , GA4A4P , GA4A4Z , GA4F3M , GA4F3P , GA4F3R .

History: 2SD515 | DDTD142JC | ISA2166AM1 | H8550D | NSE170 | SGSF663 | D40PU1

Keywords - FP1L3N transistor datasheet

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