All Transistors. HD1F3P Datasheet

 

HD1F3P Datasheet and Replacement


   Type Designator: HD1F3P
   SMD Transistor Code: L_LQ
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89
 

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HD1F3P Datasheet (PDF)

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HD1F3P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: HBCA143TC6 , HBCA143TS6R , HBCA144EC6 , HBCA144ES6R , HD1A3M , HD1A4A , HD1A4M , HD1F2Q , 2SC2383Y , HD1L2Q , HD1L3N , HD2A3M , HD2A4A , HD2A4M , HD2F2Q , HD2F3P , HD2L2Q .

Keywords - HD1F3P transistor datasheet

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