HE1A4A Datasheet and Replacement

   Type Designator: HE1A4A
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R2 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: SOT89
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