HE1A4A Specs and Replacement

Type Designator: HE1A4A

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R2 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: SOT89

 HE1A4A Substitution

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HE1A4A datasheet

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HE1A4A

2010 4 1 NEC ... See More ⇒

Detailed specifications: HD1L3N, HD2A3M, HD2A4A, HD2A4M, HD2F2Q, HD2F3P, HD2L2Q, HD2L3N, 2SD669, LDTA113TKT1G, LDTA113ZET1G, LDTA114EM3T5G, LDTA114GET1G, LDTA114TM3T5G, LDTA114WET1G, LDTA114YM3T5G, LDTA115EM3T5G

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