All Transistors. LUMF23NDW1T1G Datasheet

 

LUMF23NDW1T1G Datasheet, Equivalent, Cross Reference Search

Type Designator: LUMF23NDW1T1G

SMD Transistor Code: F23

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC-88

LUMF23NDW1T1G Transistor Equivalent Substitute - Cross-Reference Search

 

LUMF23NDW1T1G Datasheet (PDF)

1.1. lumf23ndw1t1g.pdf Size:232K _lrc

LUMF23NDW1T1G
LUMF23NDW1T1G

LESHAN RADIO COMPANY, LTD. Power Management(dual transistors) LUMF23NDW1T1G Application S-LUMF23NDW1T1G Power management circuit 6 5 4 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 1 2 3) We declare that the material of product 3 compliance with RoHS requirements. SC-88 3) S- Prefix for Automotive and Other Applic

Datasheet: LMUN5235DW1T1G , LMUN5235T1G , LMUN5236DW1T1G , LMUN5237DW1T1G , LMUN5237T1G , LRX102UT1G , LUMA5NT1G , LUMC3NT1G , 2N60 , LUMG10NT1G , LUMG2NT1G , LUMG3NT1G , EMA8 , KSR1201 , KSR1202 , KSR1203 , KSR1204 .

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