LUMF23NDW1T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LUMF23NDW1T1G
SMD Transistor Code: F23
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SC-88
LUMF23NDW1T1G Transistor Equivalent Substitute - Cross-Reference Search
LUMF23NDW1T1G Datasheet (PDF)
lumf23ndw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Power Management(dual transistors)LUMF23NDW1T1G Application S-LUMF23NDW1T1GPower management circuit 654 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 123) We declare that the material of product 3 compliance with RoHS requirements.SC-883) S- Prefix for Automotive and Other Applic
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