LUMF23NDW1T1G Specs and Replacement
Type Designator: LUMF23NDW1T1G
SMD Transistor Code: F23
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SC-88
LUMF23NDW1T1G Substitution
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LUMF23NDW1T1G datasheet
LESHAN RADIO COMPANY, LTD. Power Management(dual transistors) LUMF23NDW1T1G Application S-LUMF23NDW1T1G Power management circuit 6 5 4 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 1 2 3) We declare that the material of product 3 compliance with RoHS requirements. SC-88 3) S- Prefix for Automotive and Other Applic... See More ⇒
Detailed specifications: LMUN5235DW1T1G, LMUN5235T1G, LMUN5236DW1T1G, LMUN5237DW1T1G, LMUN5237T1G, LRX102UT1G, LUMA5NT1G, LUMC3NT1G, C3198, LUMG10NT1G, LUMG2NT1G, LUMG3NT1G, EMA8, KSR1201, KSR1202, KSR1203, KSR1204
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