LUMF23NDW1T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LUMF23NDW1T1G
SMD Transistor Code: F23
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in bias resistor R1 = 10 kOhm
Built in bias resistor R2 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SC-88
LUMF23NDW1T1G Transistor Equivalent Substitute - Cross-Reference Search
LUMF23NDW1T1G Datasheet (PDF)
1.1. lumf23ndw1t1g.pdf 
Size:232K _lrc
LESHAN RADIO COMPANY, LTD. Power Management(dual transistors) LUMF23NDW1T1G Application S-LUMF23NDW1T1G Power management circuit 6 5 4 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 1 2 3) We declare that the material of product 3 compliance with RoHS requirements. SC-88 3) S- Prefix for Automotive and Other Applic
Datasheet: LMUN5235DW1T1G , LMUN5235T1G , LMUN5236DW1T1G , LMUN5237DW1T1G , LMUN5237T1G , LRX102UT1G , LUMA5NT1G , LUMC3NT1G , 2N60 , LUMG10NT1G , LUMG2NT1G , LUMG3NT1G , EMA8 , KSR1201 , KSR1202 , KSR1203 , KSR1204 .
