All Transistors. LUMF23NDW1T1G Datasheet

 

LUMF23NDW1T1G Datasheet and Replacement


   Type Designator: LUMF23NDW1T1G
   SMD Transistor Code: F23
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SC-88
 

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LUMF23NDW1T1G Datasheet (PDF)

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LUMF23NDW1T1G

LESHAN RADIO COMPANY, LTD.Power Management(dual transistors)LUMF23NDW1T1G Application S-LUMF23NDW1T1GPower management circuit 654 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 123) We declare that the material of product 3 compliance with RoHS requirements.SC-883) S- Prefix for Automotive and Other Applic

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: RT1N44QS | 2SA1400-Z | 2SB103 | CSB1436Q | MMT930 | 2SC494Y | FJNS4203R

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