KSR2201 Specs and Replacement

Type Designator: KSR2201

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92S

 KSR2201 Substitution

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KSR2201 datasheet

 ..1. Size:40K  samsung

ksr2201.pdf pdf_icon

KSR2201

KSR2201 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7, R2=4.7 ) Complement to KSR1201 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Ba... See More ⇒

 8.1. Size:40K  samsung

ksr2204.pdf pdf_icon

KSR2201

KSR2204 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =47, R2=47 ) Complement to KSR1204 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base... See More ⇒

 8.2. Size:39K  samsung

ksr2207.pdf pdf_icon

KSR2201

KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92S Built in bias Resistor (R1=22, R2=47 ) Complement to KSR1207 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base V... See More ⇒

 8.3. Size:39K  samsung

ksr2206.pdf pdf_icon

KSR2201

KSR2206 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =10, R2=47 ) Complement to KSR1206 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base... See More ⇒

Detailed specifications: KSR1207, KSR1208, KSR1209, KSR1210, KSR1211, KSR1212, KSR1213, KSR1214, BC556, KSR2202, KSR2203, KSR2204, KSR2205, KSR2206, KSR2207, KSR2208, KSR2209

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