M54513P Datasheet and Replacement

   Type Designator: M54513P
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2 kOhm
   Built in Bias Resistor R2 = 13.6 kOhm
   Typical Resistor Ratio R1/R2 = 0.15
   Maximum Collector Power Dissipation (Pc): 1.1 W
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: 18P4G
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