MMBTRC120SS Datasheet. Specs and Replacement

Type Designator: MMBTRC120SS  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 24

Noise Figure, dB: -

Package: SOT-23

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MMBTRC120SS datasheet

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MMBTRC120SS

MMBTRC107SS MMBTRC109SS NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Features R1 Base (Input) With built-in bias resistors R2 Simplify circuit design Emitter Reduce a quantity of parts and (Common) TO-236 Plastic Package manufacturing process Resistor Values Type R1 (K ) ... See More ⇒

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MMBTRC101SS ... MMBTRC106SS MMBTRC101SS ... MMBTRC106SS Surface Mount Bias Resistor Transistors NPN NPN SMD Transistoren mit Eingangsspannungsteiler Version 2011-02-10 Power dissipation Verlustleistung 200 mW 0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgeh use (TO-236) Type Weight approx. Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classification 94V-... See More ⇒

Detailed specifications: MMBTRC103SS, MMBTRC104SS, MMBTRC105SS, MMBTRC106SS, MMBTRC116SS, MMBTRC117SS, MMBTRC118SS, MMBTRC119SS, 2N2222, MMBTRC121SS, MMUN2111LT1G, MMUN2111LT3G, MMUN2112LT1G, MMUN2113LT1G, MMUN2113LT3G, MMUN2114LT1G, MMUN2114LT3G

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