MMUN2112LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MMUN2112LT1G
SMD Transistor Code: A6B
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.246
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT-23
MMUN2112LT1G Transistor Equivalent Substitute - Cross-Reference Search
MMUN2112LT1G Datasheet (PDF)
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