MMUN2114LT3G Datasheet and Replacement
Type Designator: MMUN2114LT3G
SMD Transistor Code: A6D
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.246 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-23
MMUN2114LT3G Transistor Equivalent Substitute - Cross-Reference Search
MMUN2114LT3G Datasheet (PDF)
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMUN2111LT1/D Bias Resistor Transistor MMUN2111LT1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a s... See More ⇒
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Datasheet: MMBTRC120SS , MMBTRC121SS , MMUN2111LT1G , MMUN2111LT3G , MMUN2112LT1G , MMUN2113LT1G , MMUN2113LT3G , MMUN2114LT1G , C5198 , MMUN2115LT1G , MMUN2116LT1G , MMUN2130L , MMUN2130LT1G , MMUN2131L , MMUN2131LT1G , MMUN2132LT1G , MMUN2133LT1G .
History: TA1682 | SZD965 | DTA043EEB | BFV85D | 2SC3150L | TA2275 | BD375-16
Keywords - MMUN2114LT3G transistor datasheet
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History: TA1682 | SZD965 | DTA043EEB | BFV85D | 2SC3150L | TA2275 | BD375-16
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