2SA105 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA105
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.035 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO44
2SA105 Transistor Equivalent Substitute - Cross-Reference Search
2SA105 Datasheet (PDF)
2sa1052.pdf
2SA1052Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1052Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector powe
2sa1051.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1051 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
2sa1050.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1050 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
2sa1052.pdf
SMD Type orSMD Type TransistICsPNP Transistors2SA1052SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13Features1 2Low frequency amplifier+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -30 VCollector to emitter voltage VCEO -30 VEmitter to base volta
2sa1051.pdf
isc Silicon PNP Power Transistor 2SA1051DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sa1050.pdf
isc Silicon PNP Power Transistor 2SA1050DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -140V(Min.)(BR)CEOComplement to Type 2SC2460Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Datasheet: 2SA1048LG , 2SA1048LO , 2SA1048LY , 2SA1048O , 2SA1048Y , 2SA1049 , 2SA1049BL , 2SA1049GR , 2SC1815 , 2SA1050 , 2SA1050A , 2SA1051 , 2SA1051A , 2SA1052 , 2SA1052B , 2SA1052C , 2SA1052D .
History: 2SA1102
