MUN2114T1G Datasheet. Specs and Replacement
Type Designator: MUN2114T1G 📄📄
SMD Transistor Code: 6D
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC-59
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MUN2114T1G datasheet
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MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network SO... See More ⇒
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Detailed specifications: MMUN2238LT1G, MMUN2240L, MMUN2240LT1G, MMUN2241L, MMUN2241LT1G, MUN2111T1G, MUN2112T1G, MUN2113T1G, BC549, MUN2115, MUN2115T1G, MUN2116, MUN2116T1G, MUN2130, MUN2130T1G, MUN2131, MUN2131T1G
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