MUN2130T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MUN2130T1G
SMD Transistor Code: 6G
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 1 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.23
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: -
Package: SC-59
MUN2130T1G Transistor Equivalent Substitute - Cross-Reference Search
MUN2130T1G Datasheet (PDF)
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MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)
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MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)
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