All Transistors. MUN2231T1G Datasheet

 

MUN2231T1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MUN2231T1G
   SMD Transistor Code: 8H
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.23 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: SC-59

 MUN2231T1G Transistor Equivalent Substitute - Cross-Reference Search

   

MUN2231T1G Datasheet (PDF)

 ..1. Size:218K  onsemi
mun2211t1g mun2212t1g mun2213t1g mun2214t1g mun2215t1g mun2216t1g mun2230t1g mun2231t1g mun2232t1g mun2233t1g mun2234t1g mun2236t1g mun2237t1g mun2240t1g mun2241t1g.pdf

MUN2231T1G
MUN2231T1G

MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network

 5.1. Size:154K  tysemi
kmun2231t1.pdf

MUN2231T1G

SMD TypeSMD TypeSMD Type TransistorsProduct specificationKMUN2231T1SOT-23Unit: mm+0.1 Features2.9-0.1+0.10.4-0.1 Simplifies Circuit Design3 Reduces Board Space Reduces Component Count1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1PIN 3COLLECTORPIN 1R1 (OUTPUT)BASE1.Base(INPUT)R2PIN 22.EmitterEMITTER3.collector(GROUND)

 7.1. Size:389K  onsemi
mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf

MUN2231T1G
MUN2231T1G

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) c

 7.2. Size:215K  onsemi
mmun2211lt1g mmun2211lt3g mmun2212lt1g mmun2213lt1g mmun2214lt1g mmun2215lt1g mmun2216lt1g mmun2230lt1g mmun2231lt1g mmun2232lt1g mmun2233lt1g mmun2234lt1g.pdf

MUN2231T1G
MUN2231T1G

MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor

 7.3. Size:512K  lrc
lmun2211lt lmun2212lt lmun2213lt lmun2214lt lmun2215lt lmun2216lt lmun2230lt lmun2231lt lmun2232lt lmun2233lt lmun2234lt lmun2235lt lmun2236lt lmun2237lt lmun2238lt lmun2240lt lmun2241lt.pdf

MUN2231T1G
MUN2231T1G

LESHAN RADIO COMPANY, LTD.Bas Resstor TransstorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLMUN2211LT1G SeriesS-LMUN2211LT1G SeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network3

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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