MUN5115T1G Datasheet. Specs and Replacement
Type Designator: MUN5115T1G 📄📄
SMD Transistor Code: 6E
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.202 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SOT-323
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MUN5115T1G datasheet
MUN5111T1G Series, SMUN5111T1G, NSVMUN5111T1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network PNP SILICON This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor BIAS RESISTOR Transistor (BRT) contains a single transistor with a... See More ⇒
... See More ⇒
MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to ... See More ⇒
LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors LMUN5111DW1T1G Series with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1G network consisting of two resistors; a series base resistor and a base emitter resistor. These Series digital transistors are ... See More ⇒
Detailed specifications: MUN5112DW1, MUN5112DW1T1G, MUN5112T1G, MUN5113DW1T1G, MUN5113T1G, MUN5114DW1T1G, MUN5114T1G, MUN5115DW1T1G, 2SC2073, MUN5116DW1T1G, MUN5116T1G, MUN5130DW1, MUN5130DW1T1G, MUN5130T1G, MUN5131DW1, MUN5131DW1T1G, MUN5131T1G
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