PBRN113ZK Specs and Replacement
Type Designator: PBRN113ZK
SMD Transistor Code: G5
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT-346
PBRN113ZK Transistor Equivalent Substitute - Cross-Reference Search
PBRN113ZK detailed specifications
pbrn113zs pbrn113z pbrn113zk.pdf
PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 10 k Rev. 01 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113ZK SOT346 SC-59A TO-236 PBRN... See More ⇒
pbrn113z.pdf
PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 10 k Rev. 01 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113ZK SOT346 SC-59A TO-236 PBRN... See More ⇒
pbrn113es pbrn113e pbrn113ek.pdf
PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒
pbrn113e.pdf
PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒
Detailed specifications: MUN5332DW1T1G , MUN5333DW1T1G , MUN5334DW1T1G , MUN5335DW1T1G , MUN5336DW1 , MUN5336DW1T1G , PBRN113EK , PBRN113ES , A1015 , PBRN113ZS , PBRN123EK , PBRN123ES , PBRN123YK , PBRN123YS , PDTA113EK , PDTA113ES , PDTA113ZK .
History: 2N5430 | HF8004 | MUN5336DW1 | E6008 | E20232
Keywords - PBRN113ZK transistor specs
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History: 2N5430 | HF8004 | MUN5336DW1 | E6008 | E20232
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