PBRN123YK Specs and Replacement
Type Designator: PBRN123YK
SMD Transistor Code: G7
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT-346
PBRN123YK Transistor Equivalent Substitute - Cross-Reference Search
PBRN123YK detailed specifications
pbrn123ys pbrn123y pbrn123yk.pdf
PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 10 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123YK SOT346 SC-59A TO-236 PB... See More ⇒
pbrn123y.pdf
PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 10 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123YK SOT346 SC-59A TO-236 PB... See More ⇒
pbrn123es pbrn123e pbrn123ek.pdf
PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 2.2 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123EK SOT346 SC-59A TO-236 P... See More ⇒
pbrn123e.pdf
PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 2.2 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123EK SOT346 SC-59A TO-236 P... See More ⇒
Detailed specifications: MUN5336DW1 , MUN5336DW1T1G , PBRN113EK , PBRN113ES , PBRN113ZK , PBRN113ZS , PBRN123EK , PBRN123ES , D882 , PBRN123YS , PDTA113EK , PDTA113ES , PDTA113ZK , PDTA113ZS , PDTA114TK , PDTA114TS , PDTA123TK .
Keywords - PBRN123YK transistor specs
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