All Transistors. RT1N136S Datasheet

 

RT1N136S Datasheet, Equivalent, Cross Reference Search


   Type Designator: RT1N136S
   SMD Transistor Code: N136
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.45 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 33
   Noise Figure, dB: -
   Package: TO92S

 RT1N136S Transistor Equivalent Substitute - Cross-Reference Search

   

RT1N136S Datasheet (PDF)

 ..1. Size:146K  isahaya
rt1n136c rt1n136m rt1n136s rt1n136u.pdf

RT1N136S
RT1N136S

TransistorRT1N136X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N136X is a one chip transistor RT1N136C with built-in bias resistor,PNP type is RT1P136X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k,R2=10k). APPLICATION Inverted circuit,switchi

 8.1. Size:139K  isahaya
rt1n137p.pdf

RT1N136S
RT1N136S

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.2. Size:465K  isahaya
rt1n137s.pdf

RT1N136S
RT1N136S

RT1N137S Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1N137S is a one chip transistor with built-in bias resistor, NPN type is RT1P137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=1A 0.45 Low VCE(sat) VCE(sat)=0.3V (@Ic=300mA/IB=3mA) 2.5

 8.3. Size:126K  isahaya
rt1n130c rt1n130m rt1n130s rt1n130u.pdf

RT1N136S
RT1N136S

TransistorRT1N130X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N130X is a one chip transistor RT1N130C with built-in bias resistor,PNP type is RT1P130X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k). APPLICATION Inverted circuit,switching circui

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N3964

 

 
Back to Top