RT2N65M Specs and Replacement

Type Designator: RT2N65M

SMD Transistor Code: N65

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 820

Noise Figure, dB: -

Package: SC-88A

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RT2N65M datasheet

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Detailed specifications: RT2N24M, RT2N25M, RT2N26M, RT2N27M, RT2N28M, RT2N29M, RT2N62M, RT2N63M, 8550, RT2P01M, RT2P02M, RT2P03M, RT2P04M, RT2P05M, RT2P06M, RT2P07M, RT2P08M

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