All Transistors. RT2P29M Datasheet

 

RT2P29M Datasheet, Equivalent, Cross Reference Search


   Type Designator: RT2P29M
   SMD Transistor Code: PX
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R2 = 100 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SC-88A

 RT2P29M Transistor Equivalent Substitute - Cross-Reference Search

   

RT2P29M Datasheet (PDF)

 ..1. Size:169K  isahaya
rt2p29m.pdf

RT2P29M
RT2P29M

RT2P29M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P29M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.1. Size:165K  isahaya
rt2p25m.pdf

RT2P29M
RT2P29M

RT2P25M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.2. Size:164K  isahaya
rt2p26m.pdf

RT2P29M
RT2P29M

RT2P26M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.3. Size:170K  isahaya
rt2p27m.pdf

RT2P29M
RT2P29M

RT2P27M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.4. Size:164K  isahaya
rt2p20m.pdf

RT2P29M
RT2P29M

RT2P20M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P20M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.5. Size:165K  isahaya
rt2p24m.pdf

RT2P29M
RT2P29M

RT2P24M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.6. Size:169K  isahaya
rt2p28m.pdf

RT2P29M
RT2P29M

RT2P28M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P28M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.7. Size:164K  isahaya
rt2p22m.pdf

RT2P29M
RT2P29M

RT2P22M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P22M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top