RT3N55M Specs and Replacement

Type Designator: RT3N55M

SMD Transistor Code: N55

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SC-88

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RT3N55M datasheet

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RT3N55M

RT3N55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT3N55M is composite transistor built with two 1.25 RT1N144 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver... See More ⇒

Detailed specifications: RT2P26M, RT2P27M, RT2P28M, RT2P29M, RT3N11M, RT3N22M, RT3N33M, RT3N44M, S9018, RT3N66M, RT3N77M, RT3NAAM, RT3NBBM, RT3NCCM, RT3NDDM, RT3NEEM, RT3NFFM

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