All Transistors. RT3N77M Datasheet

 

RT3N77M Datasheet and Replacement


   Type Designator: RT3N77M
   SMD Transistor Code: N77
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-88
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RT3N77M Datasheet (PDF)

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RT3N77M

RT3N77M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3N77M is composite transistor built with two 1.25 RT1N140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA416 | DMJT9435 | 2N249 | 2SC3298A | 2N5031 | 2SA982 | 2N34A

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