RT3NDDM Specs and Replacement

Type Designator: RT3NDDM

SMD Transistor Code: NDD

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC-88

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RT3NDDM datasheet

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RT3NDDM

RT3NDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT3NDDM is composite transistor built with two 1.25 RT1N237 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver... See More ⇒

Detailed specifications: RT3N33M, RT3N44M, RT3N55M, RT3N66M, RT3N77M, RT3NAAM, RT3NBBM, RT3NCCM, B647, RT3NEEM, RT3NFFM, RT3NGGM, RT3NHHM, RT3NJJM, RT3NKKM, RT3NLLM, RT3NMMM

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