All Transistors. RT3NDDM Datasheet

 

RT3NDDM Datasheet and Replacement


   Type Designator: RT3NDDM
   SMD Transistor Code: NDD
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-88
 

 RT3NDDM Substitution

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RT3NDDM Datasheet (PDF)

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RT3NDDM

RT3NDDM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3NDDM is composite transistor built with two 1.25 RT1N237 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver

Datasheet: RT3N33M , RT3N44M , RT3N55M , RT3N66M , RT3N77M , RT3NAAM , RT3NBBM , RT3NCCM , 2SD882 , RT3NEEM , RT3NFFM , RT3NGGM , RT3NHHM , RT3NJJM , RT3NKKM , RT3NLLM , RT3NMMM .

History: PN3397 | 2N6520 | PZT4033

Keywords - RT3NDDM transistor datasheet

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